Bulk and interface properties of molybdenum trioxide-doped hole transporting layer in organic light-emitting diodes

摘要

Effects of doping molybdenum trioxide (MoO_3) in N,N'-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) are studied at various thicknesses of doped layer (25-500 A) by measuring the current-voltage characteristics, the capacitance-voltage characteristics and the operating lifetime. We formed charge transfer complex of NPB and MoO_3 by co-evaporation of both materials to achieve higher charge density, lower operating voltage, and better reliability of devices. These improved performances may be attributed to both bulk and interface properties of the doped layer. The authors demonstrated that the interface effects play more important role in lowering the operating voltage and increasing the lifetime.