Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

Anita Lloyd Spetz; Ivan Shtepliuk; Jens Eriksson; Rositsa Yakimova; Tihomir Iakimov; Volodymyr Khranovskyy

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Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

机译：具有改善的势垒高度均匀性的单层石墨烯/ SiC肖特基势垒二极管作为检测重金属的传感平台

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《Beilstein Journal of Nanotechnology》 |2016年第1期|共页
作者
Anita Lloyd Spetz; Ivan Shtepliuk; Jens Eriksson; Rositsa Yakimova; Tihomir Iakimov; Volodymyr Khranovskyy;
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1. Improving the Barrier Height Uniformity of 4H—SiC Schottky Barrier Diodes by Nitric Oxide Post-Oxidation Annealing [J] . Lee D., Kim C., Lee H., Electron Device Letters, IEEE . 2014,第8期

机译：一氧化氮后氧化退火改善4H-SiC肖特基势垒二极管的势垒高度均匀性
2. Post-annealing processes to improve inhomogeneity of Schottky barrier height in Ti/Al 4H-SiC Schottky barrier diode [J] . Kyoung Sinsu, Jung Eun-Sik, Sung Man Young Microelectronic Engineering . 2016,第mara期

机译：后退火工艺可改善Ti / Al 4H-SiC肖特基势垒二极管中肖特基势垒高度的不均匀性
3. Barrier height evolution in a non-uniform interface of Ti or Mo Schottky diodes based on 4H-SiC [J] . R. Gharbi, K. Shili, M. Ben Karoui, International Journal of Electronics Letters . 2016,第3期

机译：基于4H-SiC的Ti或Mo肖特基二极管非均匀界面中的势垒高度演化
4. Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) junction barrier Schottky diodes with almost same Schottky barrier height [C] . Akimasa Kinoshita, Takasumi Ohyanagi, Tsutomu Yatsuo, Silicon carbide and related materials 2009 . 2010

机译：具有几乎相同的肖特基势垒高度的1.2kV，100A，4H-SiC（0001）和（000-1）结势垒肖特基二极管的制造
5. Design and fabrication of Schottky barrier diodes on SiC. [D] . Saxena, Vivek. 1998

机译：SiC上的肖特基势垒二极管的设计与制造。
6. Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals [O] . Ivan Shtepliuk, Jens Eriksson, Volodymyr Khranovskyy, 2016

机译：具有改善的势垒高度均匀性的单层石墨烯/ SiC肖特基势垒二极管作为检测重金属的传感平台
7. Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals [O] . Shtepliuk, Ivan, Eriksson, Jens, Khranovskyy, Volodymyr, 2016

机译：具有改善的势垒高度均匀性的单层石墨烯/ SiC肖特基势垒二极管作为检测重金属的传感平台

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

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