Ion Beam Based Techniques for Mercury Cadmium Telluride Infrared Detectors

摘要

The paper reviews the applications of ion beam-based techniques such as ion implantation and ion beam milling, for HgCdTe detector fabrication. Fabrication of large-format arrays and two-color arrays necessitate the use of dry processes. Ion irradiation causes type conversion in HgCdTe. The type conversion is far beyond the damage sites because of Hg in-diffusion to interstitial sites. The dry processes combine high anisotropy, faster etch rates, and better dimensional control, than wet etch processes, but require the damaged region to be removed.