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Bit Mapping for Balanced PCM Cell Programming

机译:平衡PCM单元编程的位映射

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摘要

Write bandwidth is an inherent performance bottleneck for Phase Change Memory (PCM) for two reasons. First, PCM cells have long programming time, and second, only a limited number of PCM cells can be programmed concurrently due to programming current and write circuit constraints, For each PCM write, the data bits of the write request are typically mapped to multiple cell groups and processed in parallel. We observed that an unbalanced distribution of modified data bits among cell groups significantly increases PCM write time and hurts effective write bandwidth. To address this issue, we first uncover the cyclical and cluster patterns for modified data bits. Next, we propose double XOR mapping (D-XOR) to distribute modified data bits among cell groups in a balanced way. D-XOR can reduce PCM write service time by 45% on average, which increases PCM write throughput by 1.8×. As error correction (redundant bits) is critical for PCM, we also consider the impact of redundancy information in mapping data and error correction bits to cell groups. Our techniques lead to a 51% average reduction in write service time for a PCM main memory with ECC, which increases IPC by 12%.
机译:写带宽是相变存储器(PCM)固有的性能瓶颈,原因有两个。首先,PCM单元具有较长的编程时间,其次,由于编程电流和写入电路的限制,只能同时对有限数量的PCM单元进行编程。对于每个PCM写入,写入请求的数据位通常都映射到多个单元组并并行处理。我们观察到,修改后的数据位在单元组之间的不平衡分配会显着增加PCM写时间并损害有效写带宽。为了解决这个问题,我们首先发现修改后的数据位的循环模式和簇模式。接下来,我们提出双重XOR映射(D-XOR),以平衡的方式在单元组之间分配修改后的数据位。 D-XOR可以平均将PCM写服务时间减少45%,从而使PCM写吞吐量提高1.8倍。由于纠错(冗余位)对于PCM至关重要,因此我们还考虑了冗余信息对将数据和纠错位映射到单元组的影响。我们的技术使具有ECC的PCM主存储器的写入服务时间平均减少了51%,从而使IPC增加了12%。

著录项

  • 来源
    《Computer architecture news 》 |2013年第3期| 428-439| 共12页
  • 作者单位

    Department of Computer Science University of Pittsburgh Pittsburgh, PA, 15260;

    Department of Computer Science University of Pittsburgh Pittsburgh, PA, 15260;

    Department of Computer Science University of Pittsburgh Pittsburgh, PA, 15260;

    Department of Computer Science University of Pittsburgh Pittsburgh, PA, 15260;

    Department of Computer Science University of Pittsburgh Pittsburgh, PA, 15260;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Phase-change memory; memory write performance;

    机译:相变存储器;内存写入性能;

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