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Enriched residual free bubbles for semiconductor device simulation

机译:丰富的残留自由气泡,用于半导体器件仿真

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This article outlines a method for stabilising the current continuity equations which are used for semiconductor device simulation. Residual-free bubble functions (RfBF) are incorporated into a finite element (FE) implementation that are able to prevent oscillations which are seen when using the conventional Bubnov-Galerkin FE implementation. In addition, it is shown that the RfBF are able to provide stabilisation with very distorted meshes and curved interface boundaries. Comparison with the commonly used SUPG scheme is made throughout, showing that in the case of 2D problems the RfBF allow faster convergence of the coupled semiconductor device equations, especially in the case of distorted meshes.
机译:本文概述了一种用于稳定电流连续性方程的方法,该方法用于半导体器件仿真。无残差的气泡函数(RfBF)被并入到有限元(FE)实现中,该函数能够防止使用常规Bubnov-Galerkin FE实现时看到的振荡。此外,还显示了RfBF能够以非常扭曲的网格和弯曲的界面边界提供稳定性。全文与常用的SUPG方案进行了比较,表明在2D问题的情况下,RfBF可以更快地收敛耦合的半导体器件方程,特别是在网格变形的情况下。

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