...
首页> 外文期刊>Components, Packaging and Manufacturing Technology, IEEE Transactions on >Lattice Thermal Conductivity in Nanowires: Coupling the Bechmann–Kirchhoff Boundary Scattering Model With a Monte Carlo Framework
【24h】

Lattice Thermal Conductivity in Nanowires: Coupling the Bechmann–Kirchhoff Boundary Scattering Model With a Monte Carlo Framework

机译:纳米线中的晶格导热系数:将Bechmann-Kirchhoff边界散射模型与蒙特卡罗框架耦合

获取原文
获取原文并翻译 | 示例

摘要

In this article, the effect of rough surface on phonon transport has been studied for silicon nanowire structures. The diffusive boundary scattering has been treated using the Beckmann-Kirchhoff (B-K) surface roughness scattering (SRS) model, considering the effect of roughness height, correlation length, phonon wavelength, and incident/reflected angles. The model is more comprehensive and accurate than the conventional approaches, where surface roughness is usually modeled based on experimental fitting parameters or only phonon wavelength. The B-K SRS model has been integrated within a particlebased Monte Carlo phonon transport (MCPT) simulator to study the thermal conductivity of different nanowire structures. The simulator is benchmarked against the experimental data for both bulk and nanowire devices. The reduction of thermal conductivity in nanowires as a function of the degree of roughness has been discussed. It is found that for a 70-nm-width, 6-mu m-long silicon structure, using 2.3-nm roughness height and 8.9-nm correlation length, 89% reduction in thermal conductivity occurs at 300 K. The sensitivity of the developed simulator with varying degree of roughness and the effect of SRS on different phonon spectral branches have been studied. These observations can be useful in designing materials with low thermal conductivity for thermoelectric cooling applications.
机译:在本文中,研究了粗糙表面对硅纳米线结构的影响。考虑到粗糙度高度,相关长度,声子波长和入射/反射角的影响,已经使用Beckmann-Kirchhoff(B-K)表面粗糙度散射(SRS)表面粗糙度散射(SRS)模型来处理扩散边界散射。该模型比传统方法更全面,准确,其中表面粗糙度通常基于实验拟合参数或仅对声子波长进行建模。 B-K SRS模型已集成在刨精电基型蒙特卡洛声子传输(MCPT)模拟器内,以研究不同纳米线结构的导热率。模拟器与散装和纳米线器件的实验数据为基准测试。已经讨论了纳米线中的导热率的降低作为粗糙度的函数。发现,对于70-nm宽,6-mu长的硅结构,使用2.3nm粗糙度高度和8.9nm的相关长度,在300k时,导热率降低89%的导热率。发达的敏感性研究了模拟器,具有不同程度的粗糙度和SRS对不同声子谱分支的效果。这些观察结果可用于设计具有低导热率的材料进行热电冷却应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号