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Comparison of DEM and BEET Linearization Techniques for Flash Analog-to-Digital Converters

机译:闪存模数转换器的DEM和BEET线性化技术的比较

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Data converter linearization has been a subject of some interest for most of the past decade. New methods of linearizing analog-to-digital converters (ADCs) continue to be developed. Various linearization methods are available but their comparative strengths and weaknesses are not easily recognizable, making it somewhat difficult to determine which compensator would provide maximum benefit for a specific device. This paper provides a novel performance comparison of two promising real-time linearization methods for flash ADCs: the in-device DEM method, and the peripherally-implemented BEET method using SFDR, SINAD, ENOB, and THD as performance metrics. It is found that BEET is the superior compensator for devices with INL values larger than 0.25 LSB and DNL values larger than 0.25 LSB for optimal SFDR. Results from SINAD, ENOB, and THD metrics indicate that BEET is superior compared to DEM for all devices that have INL >0.05 LSB.
机译:在过去的十年中,数据转换器线性化一直是引起人们关注的主题。线性化模数转换器(ADC)的新方法继续得到发展。可以使用各种线性化方法,但是它们的比较优势和劣势不容易识别,这使得确定哪种补偿器为特定设备提供最大收益有些困难。本文提供了两种新颖的闪存ADC实时线性化方法的新颖性能比较:器件内部DEM方法和使用SFDR,SINAD,ENOB和THD作为性能指标的外围实现的BEET方法。对于最佳SFDR,对于具有INL值大于0.25 LSB和DNL值大于0.25 LSB的设备,BEET是最佳补偿器。 SINAD,ENOB和THD指标的结果表明,对于INL> 0.05 LSB的所有设备,BEET均优于DEM。

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