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A Novel Low-Complexity and Energy-Efficient Ternary Full Adder in Nanoelectronics

机译:纳米电子学中的一种新型低复杂性和节能三元全加法

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Using multi-valued logic can lead to reducing the interconnections in the chip. Reducing the interconnection, in turn, leads to decreasing the chip area and interconnections power dissipation. The design of the multi-valued logic circuits should be performed with the minimum complexity to fulfill the multi-valued logic aim. In the recent years, much research has been focused on the design of multi-valued logics in nanoelectronics due to the high capability of nanoelectronics to design them. In this paper, first, a novel single-supply ternary successor and predecessor are designed based on the multi-threshold voltage in CNFET, which is more energy efficient than those in the previous works. Then, these are used to design the ternary full adder. To reduce the number of transistors in the proposed full adder, the structure of this full adder is designed so that only one successor and predecessor are used and some common portions can be used in the sum and carry generator, and this is shown by equations. The number of transistors in the proposed single-supply full adder is reduced from 132 in the best previous single-supply full adder to54. Also, to enhance the PDP, the successor and predecessor are used in the quad-state mode ('0', '1', '2' and 'z': high impedance), where in the 'z' mode, the direct current path is cut off. The circuits are simulated by the HSPICE software, using the Stanford 32 nm CNTFET library. The simulation results confirm the correct operation of the proposed circuit and PDP improvement in the proposed ternary full adder, which is about 81.12%, as compared to the best single supply reported in the previous works.
机译:使用多值逻辑可以导致减少芯片中的互连。依次减少互连导致芯片区域和互连功率耗散降低。应以最小复杂度执行多值逻辑电路的设计,以满足多值逻辑目标。近年来,由于纳米电子学的高能力设计了纳米电子产品的多价逻辑设计,因此很多研究。本文首先,基于CNFET中的多阈值电压设计了一种新颖的单电源三元后继者和前身,比上一个工作中的节能更节能。然后,这些用于设计三元完整加法器。为了减少所提出的完整加法器中的晶体管的数量,设计了该全加法器的结构,使得仅使用一个继承者和前身,并且可以在总和和携带发电机中使用一些常用部分,并且这通过方程示出。所提出的单电源完整加法器中的晶体管的数量从132中减少了最好的先前的单电源完整加法器到54。此外,为了增强PDP,继任者和前任在四态模式('0','1','2'和'z':高阻抗中),其中在'z'模式下,直接电流路径被切断。使用STANFORD 32 NM CNTFET库由HSPICE软件模拟电路。仿真结果证实了拟议的三元完整加法器中提出的电路和PDP改进的正确操作,比以前作品中报告的最佳供应相比,约为81.12%。

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