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首页> 外文期刊>IEEE Transactions on Circuits and Systems. II, Express Briefs >A buffer-based baseband analog front end for CMOS bluetooth receivers
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A buffer-based baseband analog front end for CMOS bluetooth receivers

机译:用于CMOS蓝牙接收器的基于缓冲器的基带模拟前端

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摘要

A CMOS low-power baseband analog front end (BAFE) for an integrated bluetooth receiver is presented. The BAFE is designed using a new fully differential buffer (FDB) circuit that can effectively implement filters with gain/filtering interleaved operations. The BAFE utilizes five FDB circuits to implement a sixth-order low noise high linear prefilter, a sixth-order MOS-C tunable filter and a variable gain amplifier (VGA). The distribution of gain and filtering between the various blocks simplifies the design of the VGA stages and allows a good compromise between the input referred noise and the overall linearity. The analog front end is fabricated using a regular 1.2-μm CMOS process and occupies an area of 1.7 mm × 1.7 mm. Measurements results indicate that the total standby current consumption is less than 2.4 mA while providing a gain control range from 12-30 dB in 6-dB step. The input referred noise is less than 42 nV/√(Hz) and the out-of-band IIP3 of more than 12 dBm.
机译:提出了一种用于集成蓝牙接收器的CMOS低功耗基带模拟前端(BAFE)。 BAFE是使用新的全差分缓冲器(FDB)电路设计的,该电路可以有效地实现具有增益/滤波交错操作的滤波器。 BAFE利用五个FDB电路来实现六阶低噪声高线性预滤波器,六阶MOS-C可调滤波器和可变增益放大器(VGA)。增益和滤波在各个模块之间的分配简化了VGA级的设计,并允许在输入参考噪声与整体线性度之间取得良好的折衷。模拟前端采用常规的1.2μmCMOS工艺制造,占地1.7mm×1.7mm。测量结果表明,总待机电流消耗小于2.4 mA,同时以6 dB为步长提供12-30 dB的增益控制范围。输入参考噪声小于42 nV /√(Hz),带外IIP3大于12 dBm。

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