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Automatic Substrate Switching Circuit for On-Chip Adaptive Power-Supply System

机译:片上自适应电源系统的自动基板切换电路

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In energy-aggressive dynamic voltage scaling techniques, adaptive on-chip power supply, which can provide variable voltage in a wide range, is highly demanded. However, potential leakage and latch-up problems arise, when the substrate biasing voltages of the transistors vary with the supply voltage. An automatic substrate switching circuit (ASSC) is thus presented in this paper, with accurate voltage comparison, fast transient response and small silicon area. Experimental results show that the circuit automatically and accurately switches 1.3-nF pMOS substrate at a switching speed of 1.1 V/mus, with a switching voltage range of 1.1 to 3.3 V. The tracking error in steady state is below 18 mV. Fabricated in a standard 0.35-mum n-well digital CMOS process, the ASSC circuit only requires 0.017 mm 2 silicon areas, with a maximum static power of 116 muW.
机译:在能量消耗型动态电压缩放技术中,对可提供大范围可变电压的自适应片上电源提出了很高的要求。但是,当晶体管的衬底偏置电压随电源电压变化时,会出现潜在的泄漏和闩锁问题。因此,本文提出了一种自动基板切换电路(ASSC),具有准确的电压比较,快速的瞬态响应和较小的硅面积。实验结果表明,该电路以1.1 V / mus的开关速度和1.1至3.3 V的开关电压范围自动准确地开关1.3 nF pMOS衬底。稳态下的跟踪误差低于18 mV。 ASSC电路采用标准的0.35微米n阱数字CMOS工艺制造,仅需要0.017 mm 2的硅面积,最大静态功率为116μW。

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