High-Efficiency E-Band Power Amplifiers and Transmitter Using Gate Capacitance Linearization in a 65-nm CMOS Process

摘要

This brief presents a new design technique for high-efficiency CMOS millimeter-wave power amplifiers (PAs) and the implementations of a two-stage moderate-power PA, a three-stage high-power PA, and a transmitter all working over 68–78 GHz. The proposed PAs adopt nMOS capacitors connected at the gates of the transistors of the last one or two amplifying stages to compensate for the gate capacitance variation over a large signal swing, thus improving the linearity and the power efficiency. Implemented in a 65-nm CMOS process, the two-stage PA achieves a peak power-added efficiency (PAE) of 24.2%, a maximum gain of 17 dB, and a 3-dB bandwidth from 68 to 78 GHz. The three-stage PA achieves a saturated power (Psat) of 17.3 dBm, a peak PAE of 18.9%, and a maximum gain of 21.4 dB. The transmitter consisting of the three-stage PA and a passive double-balanced mixer with local oscillator shaping technique achieves a Psat of 14.6 dBm, a peak efficiency of 13.9%, and a conversion gain of 15.6 dB.