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Mixed-Signal Neuromorphic Computing Circuits Using Hybrid CMOS-RRAM Integration

机译:混合信号神经形态计算电路使用杂交CMOS-RRAM集成

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摘要

Recent integration of Resistive Random Access Memory (RRAM) with standard CMOS has spurred exploration of high-density and low-power in-memory computing. RRAM arrays are being intensely investigated for analog-domain Vector Matrix Multiplication (VMM) and Neuromorphic Computing. However, to exploit the advantages of RRAM over other forms of nonvolatile memories, mixed-signal circuit designers need to accommodate their device nonidealities, and design circuits to translate high-level deep neural network algorithms to mixed-signal hardware. This brief reviews the field of neuromorphic computing using hybrid CMOS-RRAM circuits, associated circuit design challenges, and potential approaches for their mitigation, followed by benchmarking of recent demonstrations.
机译:最近的电阻随机存取存储器(RRAM)与标准CMOS的集成促进了高密度和低功耗的内存计算。 RRAM阵列正在强烈地研究模拟域向量矩阵乘法(VMM)和神经形态计算。然而,为了利用RRAM在其他形式的非易失性存储器上的优点,混合信号电路设计人员需要容纳其设备的非侵入性,以及设计电路以将高级深神经网络算法转化为混合信号硬件。本简要介绍使用混合CMOS-RRAM电路,相关电路设计挑战的神经形态计算领域,以及其缓解的潜在方法,随后是最近的示威性的基准。

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