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首页> 外文期刊>Circuits and Systems II: Express Briefs, IEEE Transactions on >A Slew Rate Variation Compensated$2imes$VDD I/O Buffer Using Deterministic P/N-PVT Variation Detection Method
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A Slew Rate Variation Compensated$2imes$VDD I/O Buffer Using Deterministic P/N-PVT Variation Detection Method

机译:使用确定性P / N-补偿斜率变化的 $ 2 times $ VDD I / O缓冲区PVT变化检测方法

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摘要

A$2{oldsymbol imes }$VDD I/O buffer based on deterministic PVT variation detection algorithms to achieve slew rate compensation is proposed in this brief. By using the P-PVT and N-PVT Variation Detectors consisting of an inverter and a capacitor, the slew rate variation is significantly reduced against the PVT variation. Besides, the source-drain leakage current is reduced by turning off the auxiliary current paths after the charging and discharging transients are completed. The proposed design is implemented using a typical 40-nm CMOS process. The area of the I/O buffer is$0.216 {imes } 0.052$mm$^{2}$. Based on post-layout simulations, the slew rate variation is reduced 38.29% after the process, voltage, temperature, and leakage compensation in the worst case.
机译:A n <内联公式xmlns:mml = “ http://www.w3.org/1998/Math/MathML ” xmlns:xlink = “ http://www.w3.org/1999/xlink “> $ 2 { boldsymbol times} $ nVDD I / O缓冲区基于确定性PVT变化检测算法,本文简要介绍了实现压摆率补偿的方法。通过使用由逆变器和电容器组成的P-PVT和N-PVT变化检测器,相对于PVT变化,摆率变化显着降低。此外,在完成充电和放电瞬变之后,通过关闭辅助电流路径来减少源极-漏极泄漏电流。建议的设计使用典型的40 nm CMOS工艺实现。 I / O缓冲区的区域为 n $ 0.216 { t​​imes} 0.052 $ nmm n $ ^ {2} $ n。根据布局后仿真,在最坏的情况下,经过工艺,电压,温度和泄漏补偿后,压摆率变化降低了38.29%。

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