Ti-Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation

摘要

The Ti-Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test patterns with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by P+ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance rho(c) as low as 8.64 x 10(-6) Omega(.)cm(2) is achieved after annealing in N-2 at 900 degrees C for 5min. The sheet resistance R-sh of the implanted layers is 975 Omega/rectangle. X-ray diffraction (XRD) analysis shows the formation of Ti3SiC2 at the metal-SiC interface after thermal annealing, which is responsible for the low resistance contact.