Oxide-apertured VCSEL with short period superlattiee

摘要

Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs/AlAs short period superlattiee (SPS) used in oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) were designed. The structure of a 22-period Al_(0.9)Ga_(0.1) As (69.5 nm)/4.5-pair [GaAs (10 nm)-AlAs (1.9 nm)] DBR was grown on an n~+ GaAs substrate (100) 2° off toward (111)A by molecular beam epitaxy. The emitting wavelength was 850 nm with low threshold current of about 2 mA, corresponding to the threshold current density of 2 kA/cm~2. The maximum output power was more than 1 mW. The VCSEL device temperature was increased by heating ambient temperature from 20 to 100 ℃ and the threshold current increased slowly with the increase of temperature.