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首页> 外文期刊>Chemistry of Materials >Cuprous Tris(tert-butoxy)siloxy Complexes and Their Thermolytic Conversion to Copper-Silica and Copper Oxide-Silica Nanocomposites
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Cuprous Tris(tert-butoxy)siloxy Complexes and Their Thermolytic Conversion to Copper-Silica and Copper Oxide-Silica Nanocomposites

机译:三(叔丁氧基)甲硅烷基亚铜配合物及其热转化为铜-二氧化硅和氧化铜-二氧化硅纳米复合材料

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摘要

The (tert-butoxy)siloxy complex [CuOSi(O~tBu)_3]_4 (1) was prepared by silanolysis of [CuO~t-Bu]_4 with (~tBuO)_3SiOH and examined as a single-source precursor to Cu/SiO_2 and Cu_nO/ SiO_2 (n = 1, 2) materials. The related complex {Cu[μ-OSiPh(O~tBu)_2]}_4 (4), obtained similarly, was characterized by X-ray crystallography as having a planar Cu_4O_4 core with oxygen-bridged Cu atoms. The highly associated, sublimable {NaCu[OSi(O~tBu)_3]_2}_6 (3) was obtained by the addition of NaOSi(O~tBu)_3 to 1 or by reaction of 2 equiv of NaOSi(O~tBu)_3 with CuCl. Thermogravimetric analysis (TGA) of 1 under both oxygen and argon reveals rather sharp, low-temperature conversions to the final ceramic compositions (onset temperatures: ca. 100℃ under oxygen; ca. 150℃ under argon). Under argon, the resulting material consists of Cu° and Cu_2O nanoparticles dispersed in silica, whereas an oxygen atmosphere leads to CuO nanoparticles in silica. These materials are carbon- and hydrogen-free and are produced by elimination of isobutene, tert-butyl alcohol, water, and silanol. The pyrolytic conversion of compound 4 occurs at higher temperature and more gradually but gives relatively clean conversion to a CuO/SiO_2 composite under an oxygen atmosphere. The volatility of 1 allows its use in CVD preparations of thin films. Amorphous thin films with a Cu/Si ratio of 1:0.85 (microprobe analysis) and thicknesses ranging from 200 nm to 6 μm have been obtained.
机译:(叔丁氧基)甲硅烷氧基络合物[CuOSi(O〜tBu)_3] _4(1)是通过[CuO〜t-Bu] _4与(〜tBuO)_3SiOH硅烷化制备的,并作为Cu的单源前体进行了研究/ SiO_2和Cu_nO / SiO_2(n = 1,2)材料。类似地获得的相关络合物{Cu [μ-OSiPh(O〜tBu)_2]} _ 4(4)通过X射线晶体学表征为具有平面的Cu_4O_4核和氧桥连的Cu原子。通过将NaOSi(O〜tBu)_3加到1或2当量的NaOSi(O〜tBu)的反应中获得高度缔合的,可升华的{NaCu [OSi(O〜tBu)_3] _2} _6(3) _3用CuCl。在氧气和氩气下的1的热重分析(TGA)显示了到最终陶瓷成分的相当尖锐的低温转化(起始温度:在氧气下约为100℃;在氩气下约为150℃)。在氩气下,所得材料由分散在二氧化硅中的Cu°和Cu_2O纳米颗粒组成,而氧气气氛导致在二氧化硅中形成CuO纳米颗粒。这些材料不含碳和氢,是通过消除异丁烯,叔丁醇,水和硅​​烷醇制得的。化合物4的热解转化在较高温度下逐渐进行,但是在氧气气氛下相对纯净地转化为CuO / SiO_2复合物。 1的挥发性允许其用于薄膜的CVD制备中。已经获得了Cu / Si比为1:0.85的非晶薄膜(微探针分析),厚度范围为200 nm至6μm。

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