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Thermally stable and high ON/OFF ratio non-volatile memory devices based on poly(triphenylamine) with pendent PCBM

机译:基于聚三苯胺的热稳定高开/关比非易失性存储设备

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摘要

High ON/OFF ratio electrically bistable non-volatile WORM memory devices were prepared based on poly(triphenylamine) with different amounts of pendent PCBM. With the introduction of 10 wt% PCBM into P-TPA via covalent bonding, a memory device with low switching-ON voltage (0.9 V) and high ON/OFF ratio (10~9) could be obtained. The device performance remained satisfactory under the heating condition up to 100℃ which is beneficial to maintain device stability for computer application when other components produce heat.
机译:基于聚(三苯胺)和不同量的悬垂PCBM,制备了高开/关比的电双稳态非易失性WORM存储器件。通过共价键合将10 wt%的PCBM引入P-TPA中,可以获得具有低导通电压(0.9 V)和高开/关比(10〜9)的存储器件。在高达100℃的加热条件下,设备性能仍保持令人满意的状态,这有利于在其他组件产生热量时保持设备在计算机上的稳定性。

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  • 来源
    《Chemical Communications》 |2014年第33期|4335-4337|共3页
  • 作者单位

    Functional Polymeric Materials Laboratory, Institute of Polymer Science and Engineering, National Taiwan University, 1 Roosevelt Road, 4th Sec, Taipei 10617, Taiwan;

    Functional Polymeric Materials Laboratory, Institute of Polymer Science and Engineering, National Taiwan University, 1 Roosevelt Road, 4th Sec, Taipei 10617, Taiwan;

    Functional Polymeric Materials Laboratory, Institute of Polymer Science and Engineering, National Taiwan University, 1 Roosevelt Road, 4th Sec, Taipei 10617, Taiwan;

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  • 入库时间 2022-08-17 13:15:30

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