A New Synthesis Route Yields Mg- and Zn-Doped GaN Powders with Blue-Violet Cathodoluminescence

摘要

Gallium nitride thin films on different substrates have been extensively produced and studied due to the direct wide bandgap semiconductor properties of GaN. H.-L. Li and collaborators of the National Institute for Materials Science in Tsukuba, Japan, obtained GaN powders, pure or doped with well controlled amounts of Mg or Zn by employing a high yield fabrication method involving the direct transformation of metal oxides into their nitrides under a flow of ammonia.