Integrated circuits in silicon carbide for high-temperature applications

摘要

High-temperature electronic applications are presently limited to a maximum operational temperature of 225 degrees C for commercial integrated circuits (ICs) using silicon. One promise of silicon carbide (SiC) is high-temperature operation, although most commercial efforts have targeted high-voltage discrete devices. Depending on the technology choice, several processing challenges are involved in making ICs using SiC. Bipolar, metal oxide semiconductor field-effect transistors, and junction field-effect transistor technologies have been demonstrated in operating temperatures of up to 600 degrees C. Current technology performance and processing challenges relating to making ICs in SiC are reviewed in this article.