A New GaAs-based Long Wavelength Laser Diode Developed

摘要

Researchers at the CAS In stitute of Semiconductors (ISCAS) have made significant progress in their work on a new generation of the GaAs based long-wavelength laser device. Recently they have developed the world's first 1.586 mu m GaInNAsSb/GaNAs/GaAs single quantum well laser diode under continuous-wave operation mode at room temperature. As a result of the rapid growth of the amount of data processed through the Internet in recent years, the demands for high-speed and large-capacity optical-fibre telecommunication networks are going up drastically. In comparison with InP-based laser devices now available on the market, the GaAs-based near infrared materials feature a lower cost, better characteristic temperatures, more stable properties and simpler photonic integration. So they become ideal for developing a new generation of multi-purpose optoelectronic devices. However, extending GaInNAs(Sb) beyond 1.4 mu m has become a challenging task due to a large number of defects created while growing these highly strained metastable alloys with high nitrogen contents.