Micro X-ray Photoelectron Spectroscopy of the Laser Ablated Silicon Surface with a Laser-Produced Plasma X-ray Source

摘要

A laboratory-scale photoelectron microscope was constructed using a laser-produced plasma X-ray source and a high resolution focusing mirror. The energy resolution of 2 eV and the spatial resolution of 20 μm were obtained. To study a laser ablated silicon surface, Si 2p core level photoelectron spectra were examined before and after laser irradiation. The peak energy of the photoelectron spectra was shifted from that of the oxidized state to that of the unoxidized one. The result shows that the oxide layer of the silicon surface was removed after the laser ablation. The microscope could be used to observe these states of the Si surface in situ.