Research on Low Temperature Epitaxial Growth of Silicon Thin Film Using Low-Energy Ion Bombardment Process

摘要

Low temperature silicon epitaxy using a low-energy ion bombardment process (<30eV) has been investigated for several dopants (As, Al) and several ions (Ar~+, Kr~+). Carrier concentration of arsenic-doped silicon film decreased when an argon ion bombardment energy became greater than 22eV Arsenic is the highest dopant deactivated ion energy in n-type dopants (P: l3eV Sb: 9eV). The effects of ion bombardment on aluminum-doped silicon film are studied. In the case of Lrypton ion bombardment, silicon epitaxial film with fully activated dopant is grown in a wide range of ion bombardment energy compared with argon ion bombardment. This result will give us a right direction for a semiconductor manufacturing employing a ion bombardment process.