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WHAT IS THE BAND-GAP OF INDIUM NITRIDE?

机译:什么是氮化铟的带隙?

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To try and answer this very question, the First International Workshop on Indium Nitride met at the Esplanade Hotel in Fremantle Western Australia from 16th to 20th November 2003. Other device and material related properties were also addressed, but the question that had long been raging was about the material's band-gap. It had long been established as being 1.89 eV , but had recently been 'announced', in various popular magazines, to actually be closer to 0.7 eV. So what is the band-gap? Why is there such a large variation observed for such a fundamental property? Why on earth is anyone interested in indium nitride anyway? And how did a workshop heavily sponsored by U.S. military funding (U.S. Office of Naval Research Global, the Office of Naval Research, the Air Force Office of Scientific Research, and the Asian Office of Aerospace Research and Development) end up being held in Australia?
机译:为了回答这个问题,2003年11月16日至20日在澳大利亚西部弗里曼特尔的Esplanade酒店举行了首届氮化铟国际研讨会。还解决了其他与设备和材料有关的特性,但长期以来一直存在的问题是关于材料的带隙。它早已被确定为1.89 eV,但最近在各种流行杂志中被“宣布”为实际上接近0.7 eV。那么什么是带隙?为什么观察到这种基本特性会有如此大的变化?为什么到底有人对氮化铟感兴趣?在美国,由美国军事资金大力赞助的讲习班(美国海军研究全球办公室,海军研究办公室,空军科研办公室和亚洲航天研究与发展办公室)如何最终在澳大利亚举行?

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