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Fracture analysis of mode Ⅲ crack problems for the piezoelectric bimorph

机译:压电双压电晶片Ⅲ型裂纹问题的断裂分析

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摘要

In this paper, a symplectic method based on the Hamiltonian system is proposed to analyze the interfacial fracture in the piezoelectric bimorph under anti-plane deformation. A set of Hamiltonian governing equations is derived from the Hamiltonian function by introducing dual variables of generalized displacements and stresses which can be expanded in series in terms of the symplectic eigensolutions. With the aid of the adjoint symplectic orthogonality, coefficients of the series are determined by the boundary conditions along the crack faces and along the external geometry. The stresselectric displacement intensity factors and energy release rates (G) directly relate to the first few terms of the nonzero eigenvalue solutions. The two ideal crack boundary conditions, namely the electrically impermeable and permeable crack assumptions, are considered. Numerical examples including the complex mixed boundary conditions are considered to show fracture behaviors of the interface crack and discuss the influencing factors.
机译:提出了一种基于哈密顿系统的辛方法来分析压电双压电晶片在反平面变形下的界面断裂。通过引入广义位移和应力的对偶变量,可以根据辛本征解进行级数扩展,从汉密尔顿函数中导出一组汉密尔顿控制方程。借助于伴随辛正交性,级数的系数由沿裂纹面和沿外部几何形状的边界条件确定。应力电位移强度因子和能量释放速率(G)直接与非零特征值解的前几项有关。考虑了两个理想的裂纹边界条件,即电不渗透和可渗透裂纹的假设。数值算例包括复杂的混合边界条件被认为是显示界面裂纹的断裂行为并讨论影响因素。

著录项

  • 来源
    《Archive of Applied Mechanics》 |2014年第7期|1057-1079|共23页
  • 作者单位

    State Key Laboratory of Structure Analysis of Industrial Equipment and Department of Engineering Mechanics, Dalian University of Technology, Dalian 116024, People's Republic of China;

    State Key Laboratory of Structure Analysis of Industrial Equipment and Department of Engineering Mechanics, Dalian University of Technology, Dalian 116024, People's Republic of China;

    State Key Laboratory of Structure Analysis of Industrial Equipment and Department of Engineering Mechanics, Dalian University of Technology, Dalian 116024, People's Republic of China;

    Department of Civil and Architectural Engineering, City University of Hong Kong, Kowloon, Hong Kong;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Piezoelectric bimorph; Symplectic approach; Impermeable and permeable crack; Interface crack; Stress/electric intensity factor;

    机译:压电双压电晶片辛方法不可渗透和可渗透的裂缝;界面裂纹;应力/电强度因子;

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