首页> 外文期刊>Applied Surface Science >Defect-engineered 2D/2D hBN/g-C_3N_4 Z-scheme heterojunctions with full visible-light absorption: Efficient metal-free photocatalysts for hydrogen evolution
【24h】

Defect-engineered 2D/2D hBN/g-C_3N_4 Z-scheme heterojunctions with full visible-light absorption: Efficient metal-free photocatalysts for hydrogen evolution

机译:缺陷工程的2D / 2D HBN / G-C_3N_4 Z形方案具有全部可见光吸收的异质结:用于氢化的高效金属光催化剂

获取原文
获取原文并翻译 | 示例

摘要

2D/2D hBN/g-C3N4 nanocomposites with good photocatalytic activity have been successfully prepared, and fortunately defected 2D material heterojunction opens up new possibilities for high-efficiency photocatalysts. However, its photocatalytic performance and mechanism in splitting water have not been thoroughly explored. Herein, using the state-of-theart TDHF-HSE06 method, 2D/2D hBN/g-C3N4 nanocomposites with different defected types were discussed in detail, including C atoms doping and natural point vacancies. We demonstrate that the defect-induced Z-scheme vdW heterojunction is a key for excellent photocatalytic performance. Compared to perfect hBN/g-C3N4, the defected hBN/g-C3N4 heterojunctions have stronger interfacial interaction with more than 20 times of charge transfer. And it even has full visible-light response due to the suitable band gap width. More importantly, the Z-scheme band edge potentials have perfect redox capacity for water splitting at both PH = 0 and 7. The findings not only explain the existing experimental phenomena, but also provide new insights into the design of high-efficiency metal-free photocatalysts.
机译:已经成功制备了具有良好光催化活性的2D / 2D HBN / G-C3N4纳米复合材料,令人幸运地缺陷的2D材料异质结为高效光催化剂开辟了新的可能性。然而,它的光催化性能和分裂水的机制尚未彻底探索。在此,使用THF-HSE06方法的状态,详细讨论了具有不同差异类型的2D / 2D HBN / G-C3N4纳米复合材料,包括C原子掺杂和自然点空位。我们证明缺陷诱导的Z-Scheme VDW异质结是优异的光催化性能的关键。与完美的HBN / G-C3N4相比,缺陷的HBN / G-C3N4异质结具有较强的界面相互作用与20多次电荷转移。由于合适的带隙宽度,它甚至具有完全的可见光响应。更重要的是,Z方案频带边缘电位具有完美的氧化还原容量,用于PH = 0和7。结果不仅解释了现有的实验现象,还提供了新的洞察力,进入了高效无金属的设计光催化剂。

著录项

  • 来源
    《Applied Surface Science》 |2021年第1期|149207.1-149207.9|共9页
  • 作者单位

    Jiangxi Univ Sci & Technol Energy Mat Comp Ctr Nanchang 330013 Jiangxi Peoples R China|Jiangxi Univ Sci & Technol Jiangxi Prov Key Lab Simulat & Modelling Particul Nanchang 330013 Jiangxi Peoples R China|Hunan Univ Sch Phys & Elect Changsha 410082 Hunan Peoples R China;

    Jiangxi Univ Sci & Technol Energy Mat Comp Ctr Nanchang 330013 Jiangxi Peoples R China|Cent South Univ State Key Lab Powder Met Changsha 410083 Peoples R China|Cent South Univ Hunan Prov Key Lab Chem Engn Changsha 410083 Peoples R China;

    Jiangxi Univ Sci & Technol Energy Mat Comp Ctr Nanchang 330013 Jiangxi Peoples R China|Hunan Univ Sch Phys & Elect Changsha 410082 Hunan Peoples R China;

    Jiangxi Univ Sci & Technol Energy Mat Comp Ctr Nanchang 330013 Jiangxi Peoples R China;

    East China Jiaotong Univ Sch Sci Dept Appl Phys Nanchang 330013 Jiangxi Peoples R China;

    Jiangxi Univ Sci & Technol Energy Mat Comp Ctr Nanchang 330013 Jiangxi Peoples R China;

    Jiangxi Univ Sci & Technol Energy Mat Comp Ctr Nanchang 330013 Jiangxi Peoples R China;

    Jiangxi Univ Sci & Technol Jiangxi Prov Key Lab Simulat & Modelling Particul Nanchang 330013 Jiangxi Peoples R China;

    Jiangxi Univ Sci & Technol Jiangxi Prov Key Lab Simulat & Modelling Particul Nanchang 330013 Jiangxi Peoples R China;

    Hunan Univ Sch Phys & Elect Changsha 410082 Hunan Peoples R China;

    Cent South Univ State Key Lab Powder Met Changsha 410083 Peoples R China|Cent South Univ Hunan Prov Key Lab Chem Engn Changsha 410083 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Defect-engineered; hBN; g-C3N4; Z-scheme heterojunctions; Photocatalysts;

    机译:缺陷工程;HBN;G-C3N4;Z形方案异质结;光催化剂;

相似文献

  • 外文文献
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号