首页> 外文期刊>Applied Surface Science >Realizing stability of magnetic response under bending in flexible CoFeMnSi films with a sponge-like Ti_3C_2 MXene buffer layer
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Realizing stability of magnetic response under bending in flexible CoFeMnSi films with a sponge-like Ti_3C_2 MXene buffer layer

机译:利用海绵状Ti_3C_2 mxEne缓冲层实现柔性Cofemnsi薄膜弯曲下磁响应下的稳定性

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摘要

Flexible magnetic films have been widely investigated as a potential sensor to detect the stress or strain induced by bending. Nevertheless, the stable magnetic response is highly required in the case of wearable devices in which the bending-induced sensitivity variation should be minimized. Therefore, it is highly worthwhile to propose an approach to design a flexible magnetic film in need. Here, a flexible magnetic thin film of the potential spin gapless semiconductor CoFeMnSi (CFMS) is fabricated on an aluminum foil (Al foil), which is sensitive to the stress or strain induced under bending; but it was found that inserting a Ti3C2 MXene buffer layer, which acts as a sponge-like behavior, can significantly improve the magnetic response stability inert of the stress or strain. Impressively, the H-c can keep relatively constant under bending and the magnetic hysteresis loops remain unchanged even after repeated bending. Through the finite element calculation, we clarify the working mechanism of stress releasing by the buffer layer owing to the sponge-like elastic behavior. Our work proposes a novel approach to design flexible devices towards in need of tunable or endurable properties, and gives a theoretical instruction of selecting a buffer layer.
机译:柔性磁性薄膜已被广泛研究为潜在的传感器,以检测通过弯曲引起的应力或应变。然而,在可穿戴装置的情况下,应有稳定的磁响应,其中应最小化弯曲诱导的敏感性变化。因此,提出一种设计柔性磁膜的方法是非常值得的。这里,在铝箔(Al箔)上制造了潜在的旋转无形半导体Cofemnsi(CFMS)的柔性磁性薄膜,其对弯曲下诱导的应力或应变敏感;但结果发现,插入作为海绵状行为的Ti3C2 mxEn脱液层可以显着改善应力或菌株的磁性响应稳定性惰性。令人印象深刻地,H-C可以保持相对恒定的弯曲,即使在重复弯曲之后,磁滞环保持不变。通过有限元计算,由于海绵状弹性行为,我们阐明了缓冲层的应力释放的工作机制。我们的工作提出了一种设计灵活设备的新方法,旨在可调谐或恒定的性质,并给出了选择缓冲层的理论指导。

著录项

  • 来源
    《Applied Surface Science》 |2021年第30期|149167.1-149167.8|共8页
  • 作者单位

    Xian Univ Technol Sch Mat Sci & Engn Xian 710048 Peoples R China;

    Xian Univ Technol Sch Mat Sci & Engn Xian 710048 Peoples R China;

    Xian Univ Technol Sch Mat Sci & Engn Xian 710048 Peoples R China;

    Xian Univ Technol Sch Civil Engn & Architecture Xian 710048 Peoples R China;

    Xian Univ Technol Sch Mat Sci & Engn Xian 710048 Peoples R China;

    Xian Univ Technol Sch Mat Sci & Engn Xian 710048 Peoples R China;

    Univ Wollongong Inst Superconducting & Elect Mat Wollongong NSW 2500 Australia;

    Chinese Acad Sci Inst Met Res Shenyang Natl Lab Mat Sci Shenyang 110016 Peoples R China;

    Univ Sci & Technol Beijing Sch Mat Sci & Engn Beijing 100083 Peoples R China;

    Univ Sci & Technol Beijing Sch Mat Sci & Engn Beijing 100083 Peoples R China;

    Univ Sci & Technol Beijing Sch Mat Sci & Engn Beijing 100083 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Flexible magnetic film; Property stability; Spin gapless semiconductor; MXene Ti3C2; Bending;

    机译:柔性磁膜;性能稳定性;旋转无形半导体;MXENE TI3C2;弯曲;
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