Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth

摘要

Two series InGaN/GaN MQWs samples were prepared by metal-organic chemical vapor deposition (MOCVD) to study the effect of TMIn flow and pressure on structural parameters, emission propertied and surface morphology of InGaN well layer. This study revealed that both high In flow rate and high pressure will improve the incorporation of atoms undergoing material deterioration. However, an elevated pressure will expedite the incorporation of indium atoms while maintaining the surface morphology of InGaN well layer under low TMIn flow. For those InGaN QWs exhibiting fixed In composition and thickness, this study proposed to decrease the TMIn flow to improve the homogeneity and quality of InGaN layer, while increasing pressure to keep the In content unchanged.