Corrigendum to 'Electronic properties of air-exposed GaN(1- 100) and (0001) surfaces after several device processing compatible cleaning steps' [Appl. Surf. Sci. 495 (2019) 143514]

Auzelle T.; Ullrich F.; Hietzschold S.; Brackmann S.; Hillebrandt S.; Kowalsky W.; Mankel E.; Lovrincic R.; Fernandez-Garrido S.

首页> 外文期刊>Applied Surface Science >Corrigendum to 'Electronic properties of air-exposed GaN(1- 100) and (0001) surfaces after several device processing compatible cleaning steps' [Appl. Surf. Sci. 495 (2019) 143514]

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Corrigendum to 'Electronic properties of air-exposed GaN(1- 100) and (0001) surfaces after several device processing compatible cleaning steps' [Appl. Surf. Sci. 495 (2019) 143514]

机译：在几个设备处理兼容的清洁步骤'[Appl之后，勘探到“空气暴露的GaN（1-100）和（0001）和（0001）表面的电容”[Appl。冲浪。 SCI。 495（2019）143514]

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来源
《Applied Surface Science》 |2020年第jul15期|146279.1-146279.1|共1页
作者
Auzelle T.; Ullrich F.; Hietzschold S.; Brackmann S.; Hillebrandt S.; Kowalsky W.; Mankel E.; Lovrincic R.; Fernandez-Garrido S.;
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Leibniz Inst Forschungsverbund Berlin eV Paul Drude Inst Festkorperelekt Hausvogteipl 5-7 D-10117 Berlin Germany;

InnovationLab Speyerer Str 4 D-69115 Heidelberg Germany|Tech Univ Darmstadt Mat Sci Dept Otto Berndt Str 3 D-64287 Darmstadt Germany;

InnovationLab Speyerer Str 4 D-69115 Heidelberg Germany|Tech Univ Carolo Wilhelmina Braunschweig Inst High Frequency Technol Braunschweig Germany;

InnovationLab Speyerer Str 4 D-69115 Heidelberg Germany|Tech Univ Carolo Wilhelmina Braunschweig Inst High Frequency Technol Braunschweig Germany;

InnovationLab Speyerer Str 4 D-69115 Heidelberg Germany|Heidelberg Univ Kirchhoff Inst Phys Neuenheimer Feld 227 D-69120 Heidelberg Germany;

InnovationLab Speyerer Str 4 D-69115 Heidelberg Germany|Tech Univ Carolo Wilhelmina Braunschweig Inst High Frequency Technol Braunschweig Germany|Heidelberg Univ Kirchhoff Inst Phys Neuenheimer Feld 227 D-69120 Heidelberg Germany;

InnovationLab Speyerer Str 4 D-69115 Heidelberg Germany|Tech Univ Darmstadt Mat Sci Dept Otto Berndt Str 3 D-64287 Darmstadt Germany;

InnovationLab Speyerer Str 4 D-69115 Heidelberg Germany|Tech Univ Carolo Wilhelmina Braunschweig Inst High Frequency Technol Braunschweig Germany;

Leibniz Inst Forschungsverbund Berlin eV Paul Drude Inst Festkorperelekt Hausvogteipl 5-7 D-10117 Berlin Germany|Univ Autonoma Madrid Dept Fis Aplicada Grp Elect & Semicond C Francisco Tomas y Valiente 7 Madrid 28049 Spain;

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1. Electronic properties of air-exposed GaN(11-00) and (0001) surfaces after several device processing compatible cleaning steps [J] . Auzelle T., Ullrich F., Hietzschold S., Applied Surface Science . 2019,第NOVa30期

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4. Corrigendum to “Electronic properties of air-exposed GaN(1 −1 0 0) and (0 0 0 1) surfaces after several device processing compatible cleaning steps” Appl. Surf. Sci. 495 (2019) 143514 [O] . T. Auzelle, F. Ullrich, S. Hietzschold, 2020

机译：在几个设备处理兼容的清洁步骤“APPL”后，勘探为“空气暴露的GaN（1 -1 0 0）和（0 0 0 1）表面的（0 0 0 1）表面”Appl。冲浪。 SCI。 495（2019）143514

Corrigendum to 'Electronic properties of air-exposed GaN(1- 100) and (0001) surfaces after several device processing compatible cleaning steps' [Appl. Surf. Sci. 495 (2019) 143514]

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