机译:Al_xGa_(1-x)N / GaN轴向异质结构纳米线上沉积的石墨烯中的表面增强拉曼散射
Univ Warsaw, Fac Phys, Pasteura 5, Warsaw, Poland;
Univ Warsaw, Fac Phys, Pasteura 5, Warsaw, Poland;
Univ Warsaw, Fac Phys, Pasteura 5, Warsaw, Poland;
Univ Warsaw, Fac Phys, Pasteura 5, Warsaw, Poland;
Inst Elect Mat Technol, Wolczynska 133, Warsaw, Poland|Mil Univ Technol, Inst Optoelect, Kaliskiego 2, Warsaw, Poland;
Inst Elect Mat Technol, Wolczynska 133, Warsaw, Poland;
Inst Elect Mat Technol, Wolczynska 133, Warsaw, Poland;
Polish Acad Sci, Inst Phys, Lotnikow 32-46, Warsaw, Poland;
Polish Acad Sci, Inst Phys, Lotnikow 32-46, Warsaw, Poland;
Univ Warsaw, Fac Phys, Pasteura 5, Warsaw, Poland;
Univ Warsaw, Fac Phys, Pasteura 5, Warsaw, Poland;
Univ Warsaw, Fac Phys, Pasteura 5, Warsaw, Poland;
Univ Warsaw, Fac Phys, Pasteura 5, Warsaw, Poland;
Univ Warsaw, Fac Phys, Pasteura 5, Warsaw, Poland;
Graphene; Nanowires; Gallium nitride; Polarization; Raman spectroscopy; Electroreflectance; Carrier concentration; KPFM;
机译:由GaN纳米线阵列自诱导的石墨烯的表面增强拉曼散射
机译:GaN / Al_xGa_(1-x)N纳米线异质结构中的载流子限制(0
机译:增强的拉曼散射和GaN纳米线上沉积的石墨烯中的弱局部化
机译:Al_xGa_(1-x)N / GaN异质结构中二维电子气的磁间子带散射振荡
机译:表面增强的拉曼散射和表面增强的超拉曼散射:对新型基质上各种探测分子的系统研究。
机译:GaN纳米线上沉积石墨烯的性质:纳米线粗糙度自诱导纳米缺陷的影响
机译:自诱导引起的石墨烯表面增强拉曼散射 GaN纳米线阵列纳米光栅