Study of sputtered Cu_2ZnSnS_4 thin films on Si

摘要

Integrating commercialized Si solar cells with eco-friendly and earth-abundant Cu2ZnSnS4 (CZTS) film is a promising method to increase power conversion efficiency and hence reduce the levelized cost of electricity. However, synthesis of CZTS thin film on Si as well as the study of the interaction between the two materials, which are crucial for good performance of CZTS/Si two-terminal devices, are areas that have been less investigated. Here, we grow polycrystalline CZTS thin films on Si (1 0 0) substrate by sputtering and study the properties of the CZTS thin film and interface between the CZTS and Si. The CZTS shows uniform microstructure and optimal optical properties. A CZTS solar cell which is fabricated on Si shows a photovoltaic response although subjected to high serious resistance, and Cu diffusion was found from CZTS into Si, which caused needle-like dislocations in Si. Therefore, an effective conducive barrier layer between CZTS and Si is desirable to inhibit Cu from diffusing into Si for tandem solar cell purposes. The study offers valuable input for understanding the properties of CZTS thin film sputtered from single target sputtering and the impact on the interfaces and underlying Si, suggesting concerns that manufacturers need to be aware of for its application in tandem solar cells based on Si.