High-resolution photoemission electron spectroscopy study on the oxynitridation of 6H-SiC(0001)-root 3 x root 3R30 degrees surface

摘要

The root3 x root3R30degrees reconstructed surface of 6H-SiC(0001) was exposed to N2O from 10 L to similar to 10(6) L at sample temperatures ranging from 500 to 800 degreesC. The Si 2p emission spectra showed fast oxide formation for the first 10 L of N2O exposure and thicker oxide layer were formed at higher sample temperature. The valence band spectra at different exposures did not change much, which may denote saturation of the formed oxide layer. The deconvolution of the Si 2p spectra revealed four oxidation states: Si4+; Si3+; Si2+; and Si+. (C) 2004 Elsevier B.V. All rights reserved.