Advanced study of various characteristics found in RHEED patterns during the growth of InAs quantum dots on GaAs (001) substrate by molecular beam epitaxy

摘要

Various characteristics of RHEED patterns were examined with respect to geometrical and crystallographic point of views including chevron patterns frequently found after the growth of self-assembled InAs quantum dots, streak lines and Laue circles from GaAs wafer surface. These three patterns offer clear understanding of surface morphology change during or after dot growth. Various patterns and geometrical relationship between those patterns, coupled with specific surface reconstruction structures of GaAs (001) surface were studied.