High performance rf front end circuits using SiGe : C BiCMOS plus copper technologies

摘要

Using a first generation standard silicon germanium (SiGe):C HBT BiCMOS process, a personal digital cellular (PDC) LNA noice factor (NF) of 1.0 dB at 850 MHz and 1.2 dB at 1.5 GHz has been achieved. The LNA NF can be further reduced by using the second generation enhanced SiGe:C HBT BiCMOS process. The mixer performance is equally impressive. The NF of the downconversion mixer at 1.5 GHz is just 6.2 dB with a conversion gain of 12 dB. The mixer IIP3 is +9.9 dBm at a current drain of 5.6 mA. Design techniques are given on how to achieve high linearity with minimal current drain resulting in a 881 MHz LNA with an IIP3 of +12.4 dBm with just 6 mA of current and a NF of 1.4 dB using the first generation SiGe:C HBT BiCMOS process. The second generation enhanced SiGe:C HBT BiCMOS process should further reduce the noise figure. (C) 2003 Elsevier B.V. All rights reserved. [References: 12]