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Sol-gel synthesis of sub-50 nm ZnO nanowires on pulse laser deposited ZnO thin films

机译:脉冲激光沉积ZnO薄膜上溶胶-凝胶法合成亚50 nm ZnO纳米线

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摘要

A simple synthesis route to high-quality sub-50 nm ZnO nanowires is reported, utilizing ZnO thin films grown by pulse laser deposition (PLD) as seed layers. Depending upon the PLD growth conditions, the surface morphology of the ZnO nanowires on ZnO film was distinctively different whereas the diameters were almost the same. With the increase of the concentration of zinc nitrate/methenamine solution from 0.002 to 0.02 M, the average diameter of the ZnO nanowire increased but remained sub-50 nm. The grown ZnO nanowires showed a high crystallinity with a low defect density confirmed by a sharp photoluminescence spectrum. (c) 2006 Elsevier B.V. All rights reserved.
机译:据报道,利用通过脉冲激光沉积(PLD)生长的ZnO薄膜作为种子层,可以得到一条简单的合成路线,以生产高质量的50 nm以下ZnO纳米线。取决于PLD的生长条件,ZnO膜上的ZnO纳米线的表面形态明显不同,而直径几乎相同。随着硝酸锌/次甲基胺溶液浓度从0.002增加到0.02 M,ZnO纳米线的平均直径增加,但保持在50 nm以下。生长的ZnO纳米线显示出​​高的结晶度和低的缺陷密度,这由清晰的光致发光光谱证实。 (c)2006 Elsevier B.V.保留所有权利。

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