Quantum states in fabricating poly-Si films

摘要

The quantum states are presented in these processions of fabricating poly-Si films. Amorphous silicon films prepared by PECVD has been crystallized by conventional furnace annealing (FA) and rapid thermal annealing (RTA), respectively. It is found that the thin films grain size present quantum states with the increasing of the gas flow ratios of SiH4, H-2 mixture, substrate temperatures, frequency power, annealing temperature and time. (c) 2005 Elsevier B.V. All rights reserved.