Properties of dc magnetron sputtered Cu_2O films prepared at different sputtering pressures

摘要

The sputtering pressures maintained during the deposition of Cu_2O films, by dc reactive magnetron sputtering, influence the structural, electrical and optical properties. The crystalline orientation mainly depends on the sputtering pressure. The films deposited at a sputtering pressure of 4 Pa showed single-phase Cu_2O films along (1 1 1) direction. The electrical resistivity of the films increased from 1.1 × 10~1 Ω cm to 3.2 × 10~3 Ω cm. The transmittance of the films increased from 69% to 88% with the increase of sputtering pressure from 2.5 Pa to 8 Pa.