Post-annealing influence on properties of N-In codoped ZnO thin films prepared by ion beam enhanced deposition method

摘要

N-In codoped ZnO thin films were prepared by ion beam enhanced deposition method (IBED) and were annealed in nitrogen and oxygen ambient after deposition. The influence of post-annealing on structure, electrical and optical properties of thin films were investigated. As-deposited and all post-annealed samples showed preferential orientation along (002) plane. Electrical property studies indicated that the as-deposited ZnO film showed p-type with a sheet resistance of 67.5 kΩ. For ZnO films annealed in nitrogen with the annealing temperature increasing from 400 to 800 ℃, the conduction type of the ZnO film changed from p-type to n-type. However, for samples annealed in oxygen the resistance increased sharply even at a low annealing temperature of 400 ℃ and the conduction type did not change. Room temperature PL spectra of samples annealed in N_2 and in O_2 showed UV peak located at 381 and 356 nra, respectively.