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Preparation and characterization of CdO thin films obtained by thermal oxidation of evaporated Cd thin films

机译:蒸发Cd薄膜热氧化制得的CdO薄膜的制备与表征

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CdO thin films (d = 300-400 nm) were prepared by thermal oxidation of metallic Cd thin films, vacuum evaporated onto unheated glass substrates. The as-deposited Cd films were subsequently heat treated in open atmosphere in two manners: by slowly heating, with rate of 5 K/min up to the temperature of 650 K and maintained at this temperature for 5 min, and by flash heating for 5 min at the same temperature of 650 K. The effect of oxidation procedure on the crystalline structure and electrical (temperature dependence of electrical conductivity) and optical (transmission and reflection spectra) properties of as obtained CdO films was investigated. All obtained CdO films are polycrystalline with strong preferential orientation with (111) plane parallel to the substrate. Depending on the oxidation conditions, the electrical conductivity at room temperature varied in the range 5 × 10 to 5 × 10~4 Ω~(-1) m~(-1). Also, the optical band gap was found to be of 2.20-2.22 eV for direct transitions and of 1.83-1.92 eV for the indirect ones.rnIn this paper, the obtained results are correlated with the oxidation process that takes place during film annealing.
机译:通过对金属Cd薄膜进行热氧化来制备CdO薄膜(d = 300-400 nm),然后真空蒸发到未加热的玻璃基板上。沉积后的Cd膜随后在露天气氛中以两种方式进行热处理:通过缓慢加热,以5 K / min的速度加热到650 K,并在此温度下保持5 min,然后通过快速加热5在650 K的相同温度下的最小分钟数。研究了氧化过程对所得CdO薄膜的晶体结构和电学(电导率的温度依赖性)以及光学(透射和反射光谱)性能的影响。所有获得的CdO薄膜都是具有强优先取向的多晶,其(111)平面平行于基板。根据氧化条件,室温下的电导率在5×10至5×10〜4Ω〜(-1)m〜(-1)范围内变化。此外,发现直接跃迁的光学带隙为2.20-2.22 eV,间接跃迁的光学带隙为1.83-1.92 eV。在本文中,获得的结果与薄膜退火过程中发生的氧化过程相关。

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