Atomically controlled surfaces with step and terrace of β-Ga_2O_3 single crystal substrates for thin film growth

摘要

The surface of β-Ga_2O_3 (100) single crystal grown with floating zone method was treated by chemical-mechanical-polishing (CMP) for 30-120 min followed by annealing in oxygen atmosphere at temperature 600-1100 ℃ for 3-6 h. The evolution of the step arrangement was investigated with reflection high energy electron diffraction and atomic force microscopy. Atomically smooth surfaces with atomic step and terrace structure of β-Ga_2O_3 substrates were successfully obtained after just CMP treatment as well as CMP treatment and post annealing at 1100 ℃ for 3 h. The uniform step height was 0.57 nm, and smooth terrace width was 100 nm, where the misorientation angle was about 0.36°. The obtained atomically smooth surface provides a potential application for the high-quality epitaxial film growth.