Highly thermal stable transparent conducting SnO_2:Sb epitaxial films prepared on α-Al_2O_3 (0001) by MOCVD

摘要

Antimony-doped tin oxide (SnO_2:Sb) single crystalline films have been prepared on α-Al_2O_3 (0001) substrates by metal organic chemical vapor deposition (MOCVD). The antimony doping was varied from 2% to 7% (atomic ratio). Post-deposition annealing of the SnO_2:Sb films was carried out at 700-1100 ℃ for 30 min in atmosphere ambient. The effect of annealing on the structural, electrical and optical properties of the films was investigated in detail. All the SnO_2:Sb films had good thermal stability under 900 ℃, and the 5% Sb-doped SnO_2 film exhibited the best opto-electrical properties. Annealed above 900 ℃, the 7% Sb-doped SnO_2 film still kept high thermal stability and showed good electrical and optical properties even at 1100℃.