The Effect Of Hydrogen On Copper Nitride Thin Films Deposited By Magnetron Sputtering

摘要

Copper nitride thin films were deposited on Si (1 0 0) wafers by reactive magnetron sputtering at various H_2/N_2 ratios. X-ray diffraction measurements show that the films are composed of Cu_3N crystallites with anti-ReO_3 structure and exhibit preferred orientation of [100] direction. Although the relative composition of the films has obviously changes with the H_2/N_2 ratios, the orientations of the films keep almost no changes. However, the grain size, lattice parameter and composition of the films are strongly dependent on the H_2/N_2 ratios. The copper nitride films prepared at 10% H_2/N_2 ratios show poor stability and large weight gain compared to the copper nitride films prepared at 0% H_2/N_2 ratios.