机译:ZnO缓冲层的退火时间对水热法生长ZnO棒的结构和光学性能的影响
Department of Namo Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749, Republic of Korea;
Department of Namo Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749, Republic of Korea;
Department of Namo Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749, Republic of Korea;
Department of Namo Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749, Republic of Korea;
Department of Namo Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749, Republic of Korea;
Department of Namo Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749, Republic of Korea;
Major of Nano Semiconductor, Korea Maritime University, #1 Dongsam-dong, Yeongdo-Ku, Busan 606-791, Republic of Korea;
Department of Electronic Materials Engineering, Silla University, Cwaebeop-dong Sasang-gu, Busan 617-736, Republic of Korea;
Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714, Republic of Korea;
Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685, Singapore;
School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore;
Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685, Singapore School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore;
buffer layer annealing duration; ZnO; gydrothermal process;
机译:缓冲层退火温度对热液生长Zno结构和光学性能的影响
机译:ZnO籽晶层的退火对水热法生长在R面蓝宝石衬底上的ZnO纳米棒结构和光学性能的影响
机译:ZnO缓冲层生长中断对通过PA-MBE生长的ZnO薄膜结构和光学性质的影响
机译:ZnO膜在(0001)A1_2O_3和(111)Si衬底上沉积的ZnO膜通过MOCVD用作缓冲层的ZnO薄膜生长的GaN层
机译:GaN,ZnO和(GaN)1-x(ZnO)x的结构,电子和光学性质的第一性原理研究。
机译:快速热退火对原子层沉积生长Zr掺杂ZnO薄膜的结构电学和光学性质的影响
机译:错误:“低温缓冲液,RF功率和退火对由RF-磁控溅射生长的ZnO / Al2O3(0001)薄膜结构和光学性质的影响”J。苹果。物理。 106,023511(2009)