首页> 外文期刊>Applied Surface Science >Room-temperature ferromagnetism and in-plane magnetic anisotropy characteristics of nonpolar GaN:Mn films
【24h】

Room-temperature ferromagnetism and in-plane magnetic anisotropy characteristics of nonpolar GaN:Mn films

机译:非极性GaN:Mn薄膜的室温铁磁性和面内磁各向异性

获取原文
获取原文并翻译 | 示例
       

摘要

Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into nonpolar a-plane (1120) p-type GaN films and a subsequent rapid thermal annealing process. The ferromagnetism properties of the films were studied by means of superconducting quantum interference device (SQUID). Clearly in-plane magnetic anisotropy characteristics of the sample at 10 K were revealed with the direction of the applied magnetic field rotating along the in-plane [0001]-axis. Moreover, obvious ferromagnetic properties of the sample up to 350 K were detected by means of the temperature-dependent SQUID.
机译:通过将Mn离子注入到非极性a平面(1120)p型GaN膜中并随后进行快速热退火工艺,可以制造出稀释的磁性非极性GaN:Mn膜。利用超导量子干涉仪(SQUID)研究了薄膜的铁磁性质。沿磁场面[0001]轴旋转方向,显示了10 K时样品的明显面内磁各向异性。此外,借助于温度相关的SQUID,可以检测到高达350 K的样品明显的铁磁性能。

著录项

  • 来源
    《Applied Surface Science》 |2009年第16期|7451-7454|共4页
  • 作者单位

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083, People's Republic of China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083, People's Republic of China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083, People's Republic of China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083, People's Republic of China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083, People's Republic of China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083, People's Republic of China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083, People's Republic of China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    diluted magnetic semiconductors (DMSs); nonpolar a-plane GaN:Mn films; ion implantation; room-temperature ferromagnetic properties; in-plane magnetic anisotropy;

    机译:稀释磁性半导体(DMS);非极性a面GaN:Mn薄膜;离子注入室温铁磁性能;面内磁各向异性;
  • 入库时间 2022-08-18 03:07:50

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号