机译:在具有逐步渐变的AlGaN中间层的Si(111)上生长的GaN
Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan;
rnInstitute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan;
rnInstitute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan;
rnMaterials and Electro-Optics Research Division, Chung Shan Institute of Science and Technology, Taoyuan 325, Taiwan;
rnMaterials and Electro-Optics Research Division, Chung Shan Institute of Science and Technology, Taoyuan 325, Taiwan;
rnMaterials and Electro-Optics Research Division, Chung Shan Institute of Science and Technology, Taoyuan 325, Taiwan;
GaN; graded intermediate layers; si(111); photoluminescence; raman;
机译:使用逐步渐变的AIGaN中间层通过金属有机气相外延生长在Si(111)上的平坦GaN外延层
机译:使用中温AlGaN缓冲层在(111)Si衬底上沉积AlGaN膜并在Si上优化GaN生长
机译:具有立方GaN(111)外延中间层的GaAs(111)B上MOVPE生长的GaN层的表征
机译:MOCVD生长的AlGaN / AlN / GaN HEMT结构,具有成分渐变的AlGaN势垒层
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:用透射电子显微镜分析在alGaN / alN应变层超晶格的4英寸si(111)衬底上生长的GaN层中c + a和-c + a位错之间的反应
机译:在(00-1)蓝宝石,(100)和(111)硅衬底上生长的高质量aIN和GaN外延层