机译:不同厚度非晶态氢化硅薄膜的光吸收研究
Department of Engineering Fundamentals, Faculty of Electrical Engineering, University of Zilina, ul. kpt. J. Nalepku 1390, 031 01 Liptovsky Mikulais, Slovakia;
rnNew Technologies - Research Centre, University of West Bohemia, Univerzitni 8,306 14 Plzen, Czech Republic;
rnNew Technologies - Research Centre, University of West Bohemia, Univerzitni 8,306 14 Plzen, Czech Republic;
rnNew Technologies - Research Centre, University of West Bohemia, Univerzitni 8,306 14 Plzen, Czech Republic;
rnNew Technologies - Research Centre, University of West Bohemia, Univerzitni 8,306 14 Plzen, Czech Republic;
thin-film silicon; hydrogenated amorphous silicon; thickness; absorption coefficient; optical band-gap energy;
机译:用X射线反射率,ESCA和光学椭偏法测量硅和非晶氢化碳上全氟聚醚聚合物薄膜的厚度
机译:尾态联合密度法研究氢化非晶碳化硅薄膜的室温光致发光光谱及其在等离子体沉积氢化非晶碳化硅薄膜中的应用
机译:氢化无定形/结晶硅薄膜氧效导致的光学信号研究
机译:富硅氢化非晶氮化硅薄膜的光吸收光谱分析
机译:PECVD氢化非晶硅膜和HWCVD氢化非晶硅膜的质子NMR研究。
机译:通过快速热退火工艺增强氢化非晶碳化硅薄膜的光致发光
机译:氢化无定形/结晶硅薄膜氧效导致的光学信号研究
机译:非晶氢化氮化硅薄膜中的光诱导氮悬挂键。