机译:氢处理对p型GaN薄膜欧姆接触的影响
Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, ROC;
Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, ROC;
Department of Mechanical Engineering, Yuan Ze University, Tao-Yuan 320, Taiwan, ROC;
Institute of Electronics Engineering and Department of Electrical Engineering, National Tsing-Hua University, Hsinchu 300, Taiwan, ROC;
Department of Electronic Engineering, Chang Cung University, Tao-Yuan 333, Taiwan, ROC;
Institute of Electronics Engineering and Department of Electrical Engineering, National Tsing-Hua University, Hsinchu 300, Taiwan, ROC;
hydrogen; xps; p-gan film; inversion; ohmic contact;
机译:评述“通过Ni / Au膜的氧化实现与p型GaN的低电阻欧姆接触” [J.应用物理86,4491(1999)]
机译:重掺杂Mg的薄GaN覆盖层对p型GaN欧姆接触形成的影响
机译:通过SF6等离子体处理与p型GaN的低电阻高反射ITO / Al欧姆接触
机译:Ag膜上的石墨烯,用于与GaN基发光二极管中的p型GaN形成反射导电层欧姆接触
机译:氢原子表面清洁对n型锑化镓欧姆接触制造的影响。
机译:铱膜与氢封端的单晶金刚石之间的欧姆接触
机译:重掺杂Mg的薄GaN覆盖层对p型GaN欧姆接触形成的影响