Structure and optoelectronic properties of multi-element oxide thin film

摘要

This paper focuses on analyzing structural and optoelectronic properties of (ZnSnCuTiNb)_(1-x)O_x films. The results of XRD and HRTEM indicate that the (ZnSnCuTiNb)_(1-x)O_x films are all of amorphous without any multi-phase structure. XPS analysis confirms that the increase of the oxygen content makes the cations electron binding energy higher, suggesting the removal of valence electrons or the extent of oxidation can change the optoelectronic properties of the films. The (ZnSnCuTiNb)_(1-x)O_x films possess the characteristics of optoelectronic semiconductor whose oxygen content are 51.6 and 56 atom%. These films have carrier concentrations of 2.62×10~(20) and 1.37×10~(17) cm~(-3), and conductivities (σ) of 57.2 and 9.45×10~(-3)(Ω cm)~(-1), and indirect band gaps of 1.69 and 2.26eV, respectively. They are n-type oxide semiconductors.