机译:Taguchi法优化直流反应磁控溅射沉积Ga掺杂ZnO薄膜的参数
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
ZnO:Ga; Transparent conductive films; Magnetron sputtering; Taguchi method;
机译:基于反应性和非反应性直流磁控溅射数据分析ZnO:Al膜的相关等离子体参数
机译:直流反应磁控溅射沉积Ga掺杂ZnO薄膜的特性与衬底温度的关系
机译:射频法制备Ga掺杂ZnO薄膜电性能的工艺参数优化。磁控溅射
机译:真空退火温度对DC磁控反应溅射沉积的Ga掺杂ZnO膜性能的影响
机译:脉冲反应直流磁控溅射技术制备的高介电常数薄膜的沉积和表征。
机译:直流反应磁控溅射制备纳米结构多孔ZnO薄膜的表面性能
机译:用DC反应磁控溅射技术制备的Ni0.5Co0.5Fe2O4纳米复合膜特性的影响参数