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Influence of TaCls partial pressure on texture structure of TaC coating deposited by chemical vapor deposition

机译:TaCls分压对化学气相沉积TaC涂层织构的影响

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摘要

TaC was deposited on graphite substrate with different TaCl_5 partial pressure at 800℃ and 1200℃ by chemical vapor deposition. Microstructures and texture structures of the prepared coatings were researched with X-ray diffraction and scanning electronic microscopy. When the coating deposition process is controlled by surface reaction kinetics (800℃), TaCl_5 partial pressure had little influence on the microstructure and texture structure of the coating. When the coating formation process is controlled by diffusion kinetics (1200℃), the microstructure, texture structure of the prepared TaC grains vary greatly with TaCl_5 partial pressure. In the diffusion controlled process, the increasing of TaCl_5 partial pressure will result in the changing of gas supersaturation, and then the occurrence of secondary nucleation, which is the main reason for the changing of coating morphology and texture structure. With the help of competitive growth in (1 00) and (111) directions, the formation mechanism of the different texture coatings are discussed in detail. In addition, a diffusion model of deposition species around step-edge-corner was also proposed to explain the growth mechanism of the texture coatings.
机译:通过化学气相沉积,分别在800℃和1200℃以不同的TaCl_5分压将TaC沉积在石墨基板上。用X射线衍射和扫描电子显微镜研究了制备的涂层的微观结构和织构。当通过表面反应动力学(800℃)控制涂层沉积过程时,TaCl_5分压对涂层的微观结构和织构结构影响很小。当通过扩散动力学(1200℃)控制涂层形成过程时,制备的TaC晶粒的微观结构,织构结构随TaCl_5分压的变化而变化很大。在扩散控制过程中,TaCl_5分压的增加将导致气体过饱和度发生变化,然后发生二次成核,这是导致涂层形貌和织构发生变化的主要原因。借助(1 00)和(111)方向的竞争性增长,详细讨论了不同纹理涂层的形成机理。此外,还提出了阶跃角周围沉积物的扩散模型,以解释纹理涂层的生长机理。

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