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Influence of growth temperature and deposition duration on the structure,surface morphology and optical properties of InN/YSZ (100)

机译:生长温度和沉积时间对InN / YSZ(100)的结构,表面形态和光学性能的影响

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摘要

InN films with the wurtzite structure have been grown directly on YSZ (100) substrate by the RF-magnetron sputtering technique. Strongly (002) oriented films with smooth surfaces (0.7-2.9 nm surface roughness depending on substrate temperature), were grown within 30 min. Films deposited for 60 min developed three-dimensional (3D) pyramidal islands on top of their surfaces, which diminished the residual elastic strain. The optical absorption edge and PL peak energy around 1.7 eV were found to redshift with increasing film thickness and substrate temperature.
机译:通过射频磁控溅射技术在YSZ(100)衬底上直接生长了具有纤锌矿结构的InN薄膜。在30分钟内生长出具有光滑表面(取决于基材温度的0.7-2.9 nm表面粗糙度)的强(002)取向薄膜。沉积60分钟的薄膜在其表面顶部形成了三维(3D)金字塔形岛,从而减小了残余弹性应变。发现大约1.7 eV的光吸收边缘和PL峰值能量随着膜厚度和基板温度的增加而发生红移。

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